Semiconductor
DN030E
NPN Silicon Transistor
Features
• Extremely low collector-to-emitter saturation voltage ( VCE(SA...
Semiconductor
DN030E
NPN Silicon
Transistor
Features
Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.1V Typ. @IC /IB =100mA/10mA) Suitable for low voltage large current drivers Complementary pair with DP030E Switching Application
Ordering Information
Type NO. DN030E Marking N01 Package Code SOT-523F
Outline Dimensions
unit : mm
1.60±0.1 0.88±0.1
1.60±0.1
1.00±0.1
1 3 2
0.25~0.30
+0.1 -0.05
www.DataSheet4U.com
KST-4009-000
1.11±0.05
PIN Connections 1. Base 2. Emitter 3. Collector
0.68
0~0.1
1
DN030E
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25° C)
Symbol
VCBO VCEO VEBO IC PC Tj T stg
Ratings
15 12 5 300 150 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage
(Ta=25° C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat1) VCE(sat2) VBE(sat 1) VBE(sat2) fT C ob
Test Condition
IC=50µA, I E =0 IC=1mA, IB =0 IE =50µA, IC =0 VCB=12V, IE =0 VEB =5V, I C=0 VCE=1V, IC =100mA VCE=1V, IC =300mA IC=100mA, IB =10mA IC=300mA, IB =30mA IC=100mA, IB =10mA IC=300mA, IB =30mA VCE=5V, IC =10mA VCB=10V, IE =0, f=1MHz
Min.
15 12 5 200 70 -
Typ.
300 3
Max.
0.1 0.1...