DN030S

Semiconductor DN030S NPN Silicon Transistor Features Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.1V Typ. @IC /IB =100mA/10mA) Suitable for low voltage large current drivers Complementary pair with DP030S Switching Application Ordering Information Type NO. DN030S Marking N01 Package Code SOT-23F Outline Dimensions 2.4±0.1 1.6±0.1 unit : mm 1 2.9±0.1 1.90 BSC 3 2 0.15±0.05 0.4±0.05 PIN Connections 1. Base 2. Emitter 3. Collector www.DataSheet4U.com KST-2109-000 0.9±0.1 0~0.1 1 DN030S Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25° C) Symbol VCBO VCEO VEBO IC PC Tj T stg Ratings 15 12 5 300 200 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage (Ta=25° C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat1) VCE(sat2) VBE(sat1) VBE(sat2) fT C ob Test Condition IC=50µA, I E =0 IC=1mA, IB =0 IE =50µA, IC =0 VCB=12V, IE =0 VEB =5V, I C=0 VCE=1V, IC =100mA VCE=1V, IC =300mA IC=100mA, IB =10mA IC=300mA, IB =30mA IC=100mA, IB =10mA IC=300mA, IB =30mA VCE=5V, IC =10mA VCB=10V, IE =0, f=1MHz Min. 15 12 5 200 70 - Typ. 300 3 Max. 0.1 0.1 450 0.2 0.5 1.2 1...