Semiconductor
DN050
NPN Silicon Transistor
Features
• Extremely low collector-to-emitter saturation voltage ( VCE(SAT...
Semiconductor
DN050
NPN Silicon
Transistor
Features
Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=0.07V Typ. @IC /IB =100mA/10mA) Suitable for low voltage large current drivers Complementary pair with DP050 Switching Application.
Ordering Information
Type NO. DN050 Marking DN050 Package Code TO-92
Outline Dimensions
unit : mm
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PIN Connections 1. Emitter 2. Collector 3. Base
KST-9083-000
1
DN050
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25° C)
Symbol
VCBO VCEO VEBO IC PC Tj T stg
Ratings
15 12 5 500 625 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25° C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) fT C ob
Test Condition
IC=50µA, I E =0 IC=1mA, IB =0 IE =50µA, IC =0 VCB=12V, IE =0 VEB =5V, I C=0 VCE=1V, IC =100mA VCE=1V, IC =500mA IC=100mA, IB =10mA IC=100mA, IB =10mA VCE=5V, IC =20mA VCB=10V, IE =0, f=1MHz
Min.
15 12 5 200 70 -
Typ.
120 4.5
Max.
0.1 0.1 450 0.25 1.2 -
Unit
V V V µA µA V V MHz pF
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KST-908...