4.0A TRIAC
CQ202-4B CQ202-4D CQ202-4M CQ202-4N 4.0 AMP TRIAC 200 THRU 800 VOLTS
Central
TM
Semiconductor Corp.
DESCRIPTION: The...
Description
CQ202-4B CQ202-4D CQ202-4M CQ202-4N 4.0 AMP TRIAC 200 THRU 800 VOLTS
Central
TM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ202-4B series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER
TO-202 THYRISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL VDRM RMS On-State Current (TC=80°C) IT(RMS) Peak Non-Repetitive Surge Current (t=8.3ms) ITSM Peak Non-Repetitive Surge Current (t=10ms) ITSM I2t Value for Fusing (t=10ms) I 2t PGM PG (AV) IGM Tstg TJ ΘJA ΘJC Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Gate Current (tp=10µs) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance Peak Repetitive Off-State Voltage CQ202 -4B 200 CQ202 -4D 400 4.0 40 35 6.0 3.0 0.2 1.2 -40 to +150 -40 to +125 60 7.5 CQ202 -4M 600 CQ202 -4N UNITS 800 V A A A A2s W W A °C °C °C/W °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT VGT VTM dv/dt Rated VDRM, RGK=1KΩ Rated VDRM, RGK=1KΩ, TC=125°C VD=12V, QUAD I, II, III VD=12V, QUAD IV RGK=1KΩ VD=12V, QUAD I, II, III VD=12V, QUAD IV ITM=6.0A, tp=380µs VD=2 /3 VDRM, TC=125°C 5.0
TYP
MAX 10 200
UNITS µA µA mA mA mA V V V V/µs
6.6 35 5.2 1.1 2.0 1.25
20 50 25 1.5 2.5 1.60
R5 (27-June 2005)
www.DataSheet4U.com
Central
TM
Semiconductor Corp.
CQ202-4B CQ202-4D CQ202-4M CQ202-4N 4.0 AMP TRIA...
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