WIDE BAND DPDT SWITCH
DATA SHEET
CMOS INTEGRATED CIRCUIT
μPD5738T6N
WIDE BAND DPDT SWITCH
DESCRIPTION
The μPD5738T6N is a CMOS MMIC DPDT (Do...
Description
DATA SHEET
CMOS INTEGRATED CIRCUIT
μPD5738T6N
WIDE BAND DPDT SWITCH
DESCRIPTION
The μPD5738T6N is a CMOS MMIC DPDT (Double Pole Double Throw) switch which is developed for mobile communications, wireless communications and another RF switching applications. This device can operate within frequency from 0.01 to 2.5 GHz, having low insertion loss and high isolation performances. This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) (T6N) package, which allows high-density surface mounting.
FEATURES
Supply voltage Switch control voltage : VDD = 1.5 to 3.6 V (2.8 V TYP.) : Vcont (H) = 1.5 to 3.6 V (2.8 V TYP.) : Vcont (L) = −0.2 to +0.4 V (0 V TYP.) Low insertion loss Note : Lins1 = 0.5 dB TYP. @ f = 0.01 to 0.05 GHz : Lins2 = 0.8 dB TYP. @ f = 0.05 to 1.0 GHz : Lins3 = 1.4 dB TYP. @ f = 1.0 to 2.0 GHz : Lins4 = 1.6 dB TYP. @ f = 2.0 to 2.5 GHz High isolation Note : ISL1 = 45 dB TYP. @ f = 0.01 to 0.05 GHz : ISL2 = 22 dB TYP. @ f = 0.05 to 1.0 GHz : ISL3 = 16 dB TYP. @ f = 1.0 to 2.0 GHz : ISL4 = 15 dB TYP. @ f = 2.0 to 2.5 GHz Handling power Note : Pin (1 dB) = +20 dBm TYP. @ f = 1.0 GHz : Pin (0.1 dB) = +15 dBm TYP. @ f = 1.0 GHz High-density surface mounting : 6-pin plastic TSON (T6N) package (1.5 × 1.5 × 0.37 mm) High ESD voltage : machine-model 200 V (TYP.), human-body-model 3 kV (TYP.) Note TA = 25°C, VDD = 2.8 V, Vcont (H) = 2.8 V, Vcont (L) = 0 V
APPLICATIONS
Mobile communications Wireless communications Another RF switch...
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