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UPD5738T6N

NEC

WIDE BAND DPDT SWITCH

DATA SHEET CMOS INTEGRATED CIRCUIT μPD5738T6N WIDE BAND DPDT SWITCH DESCRIPTION The μPD5738T6N is a CMOS MMIC DPDT (Do...


NEC

UPD5738T6N

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Description
DATA SHEET CMOS INTEGRATED CIRCUIT μPD5738T6N WIDE BAND DPDT SWITCH DESCRIPTION The μPD5738T6N is a CMOS MMIC DPDT (Double Pole Double Throw) switch which is developed for mobile communications, wireless communications and another RF switching applications. This device can operate within frequency from 0.01 to 2.5 GHz, having low insertion loss and high isolation performances. This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) (T6N) package, which allows high-density surface mounting. FEATURES Supply voltage Switch control voltage : VDD = 1.5 to 3.6 V (2.8 V TYP.) : Vcont (H) = 1.5 to 3.6 V (2.8 V TYP.) : Vcont (L) = −0.2 to +0.4 V (0 V TYP.) Low insertion loss Note : Lins1 = 0.5 dB TYP. @ f = 0.01 to 0.05 GHz : Lins2 = 0.8 dB TYP. @ f = 0.05 to 1.0 GHz : Lins3 = 1.4 dB TYP. @ f = 1.0 to 2.0 GHz : Lins4 = 1.6 dB TYP. @ f = 2.0 to 2.5 GHz High isolation Note : ISL1 = 45 dB TYP. @ f = 0.01 to 0.05 GHz : ISL2 = 22 dB TYP. @ f = 0.05 to 1.0 GHz : ISL3 = 16 dB TYP. @ f = 1.0 to 2.0 GHz : ISL4 = 15 dB TYP. @ f = 2.0 to 2.5 GHz Handling power Note : Pin (1 dB) = +20 dBm TYP. @ f = 1.0 GHz : Pin (0.1 dB) = +15 dBm TYP. @ f = 1.0 GHz High-density surface mounting : 6-pin plastic TSON (T6N) package (1.5 × 1.5 × 0.37 mm) High ESD voltage : machine-model 200 V (TYP.), human-body-model 3 kV (TYP.) Note TA = 25°C, VDD = 2.8 V, Vcont (H) = 2.8 V, Vcont (L) = 0 V APPLICATIONS Mobile communications Wireless communications Another RF switch...




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