HY27UF164G2B

1 HY27UF(08/16)4G2B Series 4Gbit (512Mx8bit) NAND Flash 4Gb NAND FLASH HY27UF(08/16)4G2B www.DataSheet4U.com This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.4 / Jan. 2008 1 1 HY27UF(08/16)4G2B Series 4Gbit (512Mx8bit) NAND Flash Document Title 4Gbit (512Mx8bit) NAND Flash Memory Revision History Revision No. 0.0 Initial Draft. 1) Correct Cache Read 2) Correct Valid Bad Block Numbers 0.1 3) Delete ULGA package 4) Correct Read ID - 3th cycle : 50h → 10h 0.2 1) Correct Cache Read figure 2) Correct Block Erase 1) Change tRCBSY to tRBSY 2) Change figure 13 1) Delete Preliminary Jun. 27. 2007 Preliminary Jun. 22. 2007 Preliminary History Draft Date May. 18. 2007 Remark Preliminary 0.3 Sep. 11. 2007 Preliminary 0.4 Jan. 08. 2008 www.DataSheet4U.com Rev 0.4 / Jan. 2008 2 1 HY27UF(08/16)4G2B Series 4Gbit (512Mx8bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications MULTIPLANE ARCHITECTURE - Array is split into two independent planes. Parallel Operations on both planes are available, halving Program and erase time. NAND INTERFACE - x8/x16 bus width. - Address/ Data Multiplexing - Pinout compatiblity for all densities SUPPLY VOLTAGE - 3.3V device : Vcc = 2.7 V ~3.6 V MEMORY CELL ARRAY - x8 : (2K + 64) bytes x 64 pages x 4096 blocks - x16 : (1K + 32) words x...