SSM40T03GS

SSM40T03GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free, RoHS compliant. D BV DSS R DS(ON) ID 30V 25mΩ 28A G S DESCRIPTION The SSM40T03GS is in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. This device is suitable for low-voltage applications such as DC/DC converters. The through-hole version, the SSM40T03GP in TO-220, is available for vertical-mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. G G D S TO-263 (S) ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 D TO-220(P) S Units V V A A A W W/°C Rating 30 ±25 28 24 95 31 0.25 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 °C °C THERMAL DATA Symbol www.DataSheet4U.com Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance Junction-ambient Value 4 62 Units °C/W °C/W RΘJC RΘJA 9/16/2005 Rev.3.1 www.SiliconStandard.com 1 of 5 SSM40T03GP,S ELECTRICAL CHARACTERISTICS (at Tj=25°C, unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.032 Max. Units 25 45 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC...