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3DD5024A Dataheets PDF



Part Number 3DD5024A
Manufacturers JILIN SINO-MICROELECTRONICS
Logo JILIN SINO-MICROELECTRONICS
Description CASE-RATED BIPOLAR TRANSISTOR
Datasheet 3DD5024A Datasheet3DD5024A Datasheet (PDF)

R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5024A FOR LOW FREQUENCY 3DD5024A Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»úÐä³öµç· MAIN CHARACTERISTICS 1500 V 8 3 0.6 A V(max) ¦Ì s(max) ·â×° Package TO-220HF APPLICATIONS z Horizontal deflection output for color TV. 1 2 3 ²úÆ·ÌØÐÔ z 3DD5024A ÊÇ Ð͸߷´Ñ¹ó¦Âʾ§ÌåÜ£¬ ÖÆÔìÖвÉÓõÄÖ÷Òª¹¤ÒÕ ¼ÊõÓУº ¸ßѹƽÃæ¤ÒÕ¼ Êõ¡¢ÈýÖØÀ©É¼µ ÓÃËÜÁÏÈ«°ü·â½á¹¡£ £¨ RoHS£Æ·¡£©²ú NPN Ë«¼ FEATURES z 3DD5024A is high breakdown µÈЧç· volta.

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R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5024A FOR LOW FREQUENCY 3DD5024A Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»úÐä³öµç· MAIN CHARACTERISTICS 1500 V 8 3 0.6 A V(max) ¦Ì s(max) ·â×° Package TO-220HF APPLICATIONS z Horizontal deflection output for color TV. 1 2 3 ²úÆ·ÌØÐÔ z 3DD5024A ÊÇ Ð͸߷´Ñ¹ó¦Âʾ§ÌåÜ£¬ ÖÆÔìÖвÉÓõÄÖ÷Òª¹¤ÒÕ ¼ÊõÓУº ¸ßѹƽÃæ¤ÒÕ¼ Êõ¡¢ÈýÖØÀ©É¼µ ÓÃËÜÁÏÈ«°ü·â½á¹¡£ £¨ RoHS£Æ·¡£©²ú NPN Ë«¼ FEATURES z 3DD5024A is high breakdown µÈЧç· voltage of NPN bipolar transistor. The main process of manufacture: high voltage plane type process, triple diffused process etc., adoption of fully plastic packge. RoHS product. EQUIVALENT CIRCUIT ,²É »·±£ RBE=50¦¸ (Typ.) ¶©»õÐÅÏ¢ ¶© »õ ÐÍ ORDER MESSAGE ºÅ Ó¡ ¼Ç ·ñ ÎÞ±ËØ Halogen Free NO ·â ×° °ü Ìõ¹Ü TO-220HF ×° Packaging Tube Order codes 3DD5024A-O-HF-N-B Marking D5024A Package Ó¡¼Ç˵Ã÷ MARKING É̱ê ÐͺŠÄêÔÂÖÜ ¾ÙÀý www.DataSheet4U.com Trademark Part No. Year month week For example 8¡±£2008£¬¡° 10¡± 10 Ô ¡° october ¡° A¡±µÚ 1 ÖÜ first week °æ±¾£º 200911C 1/6 R 3DD5024A ABSOLUTE RATINGS (Tc=25¡æ Ïî Ä¿ Parameter ¾ø¶Ô×î´ó ¨Öµ ) Êý µÖ Value 1500 600 6 8 16 4 35 150 ¡æ ¡æ -55~+150 µ¥ »Î Unit V V V A A W û· ºÅ Symbol ¼¯µç¼« —»ù¼«Ö±Á÷µçѹ Collector−Base Voltage ¼¯µç¼« —·¢É伫ֱÁ÷µçѹ Collector−Emitter Voltage ·¢É伫 —»ù¼«Ö±Á÷µçѹ Emitter−Base Voltage ×î´ó¼¯µç¼«µçÁ÷ Collector Current Ö±Á÷ Âö³å DC BVCBO BVCEO BVEBO Pulse IC ICP IB PC Tj TSTG ×î´ó»ù¼«Ö±Á÷µçÁ÷ Base Current ×î´ó¼¯µç¼«ºÄÉ¢¹¦ÂÊ Collector Power Dissipation ×î¸ß½áΠMax. Junction Temperature ´¢æÎÂ¶È Storage Temperature Range µçÌØÐÔ Ïî ELECTRICAL CHARACTERISTICS (Tc=25¡æ Ä¿ Parameter ) ×î´óÖµ µ¥Î» Max ²âÊÔÌõ¼þ Tests conditions IC=1mA,IE=0 IE=400mA,IC=0 VCB=1500V, IE=0 VEB=4V, IC=0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 4 A IC=4.5A, IB=0.9A IC=4.5A, IB=0.9A IF=4A IC=4.5A,2IB1=-IB2=1.8A fH=15.75kHz VCE=10V, IC=0.1A ×îСֵ Min Unit V(BR)CBO V(BR)EBO ICBO IEBO HFE VCE(sat) VBE(sat) -VF tf ts ft www.DataSheet4U.com 1500 6 1 40 8 5 3 1.3 2 0.6 6 1.7 150 25 V V mA mA V V V µs µs MHz °æ±¾£º 200911C 2/6 R 3DD5024A ELECTRICAL CHARACTERISTICS CURVES IC – VCE HFE – IC ÌØÕ÷ÇúÏß COMMON EMITTER TC=25¡æ A£© IC£¨ HFE COMMON EMITTER VCE=5V VCE£¨ V£© IC£¨ A£© VCE - IB VCE£¨ sat£© - IC COMMON V£© EMITTER TC=25¡æ VCE(sat)£¨ VCE£¨ V£© COMMON EMITTER TC=25¡æ IB£¨ A£© IC£¨ A£© www.DataSheet4U.com °æ±¾£º 200911C 3/6 R 3DD5024A IC - VBE COMMON EMITTER SOA TC=25¡æ DC A£© VCE=5V IC£¨ IC£¨ A£© CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE VBE£¨ V£© VCE£¨ V£© PC-TC INFINITE HEAT SINK PC(W) Tc(¡æ ) www.DataSheet4U.com °æ±¾£º 200911C 4/6 R 3DD5024A µ¥Î» Unit £º mm PACKAGE MECHANICAL DATA TO-220HF ÍâÐγߴç www.DataSheet4U.com °æ±¾£º 200911C 5/6 R 3DD5024A NOTE 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company..


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