3DD5032

R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032 FOR LOW FREQUENCY 3DD5032 Ö÷Òª²ÎÊý BVCBO Ic Vce(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»úÐä³öµç· MAIN CHARACTERISTICS 1500 V 8 3 1 ¦Ì A V(max) s(max) ·â×° Package TO-3P(H)IS APPLICATIONS z Horizontal deflection output for color TV. B C E ²úÆ·ÌØÐÔ z 3DD5032 ÊÇ ¸ß·´Ñ¹ó¦Âʾ§ÌåÜ£¬ ÔìÖвÉÓõÄÖ÷Òª¹¤ÒÕ¼ ÊõÓУº¸ßѹ̨Ã湤ÒÕ¼ Êõ¡¢ÈýÖØÀ©É¼µ ÓÃËÜÁÏÈ«°ü·â½á¹¡£ NPN Ë«¼ÐÍ ÖÆ FEATURES z 3DD5032 is high breakdown µÈЧç· EQUIVALENT CIRCUIT voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, triple diffused process etc, adoption of fully plastic packge. ,²É ¶©»õÐÅÏ¢ ¶© »õ ÐÍ ORDER MESSAGE ºÅ Ó¡ ¼Ç ÎÞ±ËØ Halogen Free ·ñ ·ñ NO NO ·â ×° Order codes 3DD5032-O-A-N-D 3DD5032-Y-O-A-B-D Marking D5032 D5032 Package TO-3P(H)IS RBE=50¦¸ °ü (Typ.) ×° Æ÷¼þÖØÁ¿ Device Weight 5.50 g(typ) 5.50 g(typ) Packaging ÅÝÄÅÝÄFoam Foam TO-3P(H)IS-Y Ó¡¼Ç˵Ã÷ MARKING É̱ê ÐͺŠwww.DataSheet4U.com Trademark Part No. Year month For example 8¡±£2008£¬¡° 10¡± ÄêÔ ¾ÙÀý ¡° 10 Ô october °æ±¾£º 200911G 1/7 R 3DD5032 ABSOLUTE RATINGS (Tc=25¡æ Ïî Ä¿ Parameter ) ¾ø¶Ô×î´ó ¨Öµ û· ºÅ Symbol Êý µÖ Value 1500 600 6 8 16 4 50 150 µ¥ »Î Unit V V V A A W ¼¯µç¼« —»ù¼«Ö±Á÷µçѹ Collector−Base Voltage ¼¯µç¼« —·¢É伫ֱÁ÷µçѹ Collector−Emitter Voltage ·¢É伫 —»ù¼«Ö±Á÷µçѹ Emitter−Base Voltage ×î´ó¼¯µç¼«µçÁ÷ Collector Current Ö±Á÷ Âö³å DC BVCBO BVCEO BVEBO Pulse IC ICP IB PC Tj TSTG ×î´ó»ù¼«Ö±Á÷µçÁ÷ ...