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CASE-RATED BIPOLAR TRANSISTOR 3DD5310 FOR LOW FREQUENCY AMPLIFICATION
3DD5310HF
BVCBO IC VCE(sat) tf
MAIN CHARACT...
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CASE-RATED BIPOLAR
TRANSISTOR 3DD5310 FOR LOW FREQUENCY AMPLIFICATION
3DD5310HF
BVCBO IC VCE(sat) tf
MAIN CHARACTERISTICS
1000V 10 A 0.5 V(max) 0.3 μs(max)
Package TO-220HF
z
APPLICATIONS
z Switching power supply
for color TV.
FEATURES
1
2 3
z 3DD5310HF
NPN z 3DD5310HF is high breakdown , voltage of
NPN bipolar
transistor. EQUIVALENT CIRCUIT The main process of manufacture: : high voltage planar technology, 、, triple diffused process etc., 。 adoption of fully plastic packge. RoHS product. (RoHS)。
ORDER MESSAGE
Order codes 3DD5010HF-O-A-N-D Halogen Free Device Weight -Marking D5310HF Package TO-220HF Packaging Tube
MARKING
Trademark Part No. Year month For example “8”-2008,“10”10 october
www.DataSheet4U.com
:201012A
1/5
R
3DD5310HF
ABSOLUTE RATINGS (Tc=25℃)
Parameter
Symbol
Value 1000 600 6 10 20 5 35 150 -55~+150
Unit V V V A A W
— Collector−Base Voltage — Collector−Emitter Voltage — Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Max. Junction Temperature Storage Temperature Range
DC Pulse
BVCBO BVCEO BVEBO IC ICP IB PC Tj TSTG
℃ ℃
ELECTRICAL CHARACTERISTICS (Tc=25℃)
Parameter
Tests conditions IC=10mA,IB=0 IC=1mA,IE=0 IE=1mA,IC=0 VCB=900V, IE=0 VEB=6V, IC=0 VCE = 5V, IC = 1A VCE = 5V, IC = 5A IC=3A, IB=0.6A IC=3A, IB=0.6A IC=5A,2IB1=-IB2=2A fH=15.75kHz VCE=10V, IC=0.1A
Min
Max
Unit V V V
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO HFE VCE(sat) VBE(sat) tf ts ...