AUTOMOTIVE GRADE
AUTOMOTIVE GRADE
PD - 96279
• • • • • • • • • •
100% Tested at Probe * Designed for Automotive Application** Solderab...
Description
AUTOMOTIVE GRADE
PD - 96279
100% Tested at Probe * Designed for Automotive Application** Solderable Front Metal Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C Short Circuit Rated Square RBSOA Positive VCE (on) Temperature Coefficient Tight Parameter Distribution
AUIRG7CH80K6B-M
C
Features
G E
n-channel
Applications Medium/High Power Inverters HEV/EV Inverter
Benefits High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to Low VCE (on) and Low Switching Losses Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation Enables Double side cooling and higher current density Eliminates wire bonds and Improves Reliability
Chip Type
AUIRG7CH80K6B
VCE
1200V
ICn
200A
Die Size
12 X 12 mm2
Package
Wafer
Mechanical Parameter
Die Size Emiter Pad Size (Included Gate Pad) Gate Pad Size Area Total / Active Thickness Wafer Size Flat Position Maximum-Possible Chips per Wafer Passivation Frontside Front Metal Backside Metal Die Bond Reject Ink Dot Size Recommended Storage Environment
Note:
12.075x12.075 See Die Drawing mm2 Round, 1mm diameter 144/114 140 µm 150 mm 0 Degrees 89 pcs Silicon Nitride Al (4µm), Ti (0.1µm), Ni (0.2µm), Ag (0.6µm) Al (0.1µm), Ti (0.1µm), Ni (0.4µm), Ag (0.6µm) Electrically conductive epoxy or solder 0.51mm min (black, center) Store in original container, in dry Nitrogen, <6 months...
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