IRG7PH30K10PBF

PD - 96156A IRG7PH30K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package C VCES = 1200V IC = 23A, TC = 100°C G E tSC ≥ 10µs, TJ(max) =175°C n-channel C VCE(on) typ. = 2.05V Benefits High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation E C G TO-247AC G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current Vge = 15V Clamped Inductive Load Current Vge = 20V Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Max. 1200 33 23 9.0 Units V A c 27 36 ±30 210 110 -55 to +175 °C V W www.DataSheet4U.com Thermal Resistance Parameter RθJC (IGBT) RθCS RθJA Thermal Resistance Junc...