IRG7PH35UD-EP BIPOLAR TRANSISTOR Datasheet

IRG7PH35UD-EP Datasheet, PDF, Equivalent


Part Number

IRG7PH35UD-EP

Description

INSULATED GATE BIPOLAR TRANSISTOR

Manufacture

International Rectifier

Total Page 11 Pages
Datasheet
Download IRG7PH35UD-EP Datasheet


IRG7PH35UD-EP
PD-96288
IRG7PH35UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRG7PH35UD-EP
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Square RBSOA
• 100% of the parts tested for ILM 
• Positive VCE (ON) temperature co-efficient
• Ultra fast soft recovery co-pak diode
• Tight parameter distribution
• Lead-Free
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
C
G
E
n-channel
C
VCES = 1200V
I NOMINAL = 20A
TJ(max) = 150°C
VCE(on) typ. = 1.9V
C
Applications
• U.P.S.
• Welding
• Solar Inverter
• Induction Heating
GC E
TO-247AC
IRG7PH35UDPbF
GC E
TO-247AD
IRG7PH35UD-EP
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C
Continuous Collector Current
INOMINAL
Nominal Current
ICM Pulse Collector Current, VGE=15V
cILM Clamped Inductive Load Current, VGE=20V
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
IFM
Diode Continous Forward Current
dDiode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C
Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
www.DataSheet4U.comMounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
1200
50
25
20
60
80
50
25
80
±30
180
70
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.70
0.65
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com
02/08/10

IRG7PH35UD-EP
IRG7PH35UDPbF/IRG7PH35UD-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
1200 —
V(BR)CES/TJ
Temperature Coeff. of Breakdown Voltage
— 1.2 —
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.9 2.2
— 2.3 —
VGE(th)
Gate Threshold Voltage
3.0 — 6.0
VGE(th)/TJ
Threshold Voltage temp. coefficient
— -16 —
gfe Forward Transconductance
— 22 —
ICES Collector-to-Emitter Leakage Current — 2.0 100
— 2000 —
VFM Diode Forward Voltage Drop
— 2.8 3.6
— 2.5 —
IGES Gate-to-Emitter Leakage Current
— — ±100
Units
Conditions
eV VGE = 0V, IC = 250µA
V/°C VGE = 0V, IC = 1mA (25°C-150°C)
V IC = 20A, VGE = 15V, TJ = 25°C
IC = 20A, VGE = 15V, TJ = 150°C
V VCE = VGE, IC = 600µA
mV/°C VCE = VGE, IC = 600µA (25°C - 150°C)
S VCE = 50V, IC = 20A, PW = 30µs
µA VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
V IF = 20A
IF = 20A, TJ = 150°C
nA VGE = ±30V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Qg Total Gate Charge (turn-on)
— 85 130
Qge Gate-to-Emitter Charge (turn-on)
— 15 20
Qgc Gate-to-Collector Charge (turn-on)
— 35 50
Eon Turn-On Switching Loss
— 1060 1300
Eoff Turn-Off Switching Loss
— 620 850
Etotal
Total Switching Loss
— 1680 2150
td(on)
Turn-On delay time
— 30 50
tr Rise time
— 15 30
td(off)
Turn-Off delay time
— 160 180
tf Fall time
— 80 105
Eon Turn-On Switching Loss
— 1750 —
Eoff Turn-Off Switching Loss
— 1120 —
Etotal
Total Switching Loss
— 2870 —
td(on)
Turn-On delay time
— 30 —
tr Rise time
— 15 —
td(off)
Turn-Off delay time
— 190 —
tf Fall time
— 210 —
Cies Input Capacitance
— 1940 —
Coes Output Capacitance
— 120 —
Cres Reverse Transfer Capacitance
— 40 —
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
— 790 —
— 105 —
— 40 —
Units
nC
µJ
ns
Conditions
IC = 20A
VGE = 15V
VCC = 600V
IC = 20A, VCC = 600V, VGE = 15V
RG = 10, L = 200uH, LS = 150nH, TJ = 25°C
Energy losses include tail & diode reverse recovery
IC = 20A, VCC = 600V, VGE = 15V
RG = 10, L = 200uH, LS = 150nH, TJ = 25°C
IC = 20A, VCC = 600V, VGE=15V
µJ RG=10, L=200uH, LS=150nH, TJ = 150°C
Energy losses include tail & diode reverse recovery
IC = 20A, VCC = 600V, VGE = 15V
ns RG = 10, L = 200uH, LS = 150nH
TJ = 150°C
pF VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 150°C, IC = 80A
VCC = 960V, Vp =1200V
Rg = 10, VGE = +20V to 0V
µJ TJ = 150°C
ns VCC = 600V, IF = 20A
A VGE = 15V, Rg = 10, L =1.0mH, Ls = 150nH
www.DataSheet4U.com
Notes:
 VCC = 80% (VCES), VGE = 20V, RG = 50.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Rθ is measured at TJ of approximately 90°C.
2 www.irf.com


Features PD-96288 INSULATED GATE BIPOLAR TRANSIS TOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE (ON) trench IGBT technology L ow switching losses Square RBSOA 100% o f the parts tested for ILM  Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free IRG7P H35UDPbF IRG7PH35UD-EP C VCES = 1200V I NOMINAL = 20A G E TJ(max) = 150°C Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching l osses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation n-channel C VCE(on) typ. = 1.9V C A pplications • • • • U.P.S. Weld ing Solar Inverter Induction Heating G C E TO-247AC IRG7PH35UDPbF GC E TO-247 AD IRG7PH35UD-EP G Gate C Collector E Emitter Absolute Maximum Ratings Par ameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VG.
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