PD-96288
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
• • • • • • • • Low VCE (ON) tre...
PD-96288
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free
IRG7PH35UDPbF IRG7PH35UD-EP
C
VCES = 1200V I NOMINAL = 20A
G E
TJ(max) = 150°C
Benefits
High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation
n-channel
C
VCE(on) typ. = 1.9V
C
Applications
U.P.S. Welding Solar Inverter Induction Heating
GC E TO-247AC IRG7PH35UDPbF
GC E TO-247AD IRG7PH35UD-EP
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE=15V Clamped Inductive Load Current, VGE=20V Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)...
