INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) trench IGBT technology • Low switching losses • Maximum juncti...
INSULATED GATE BIPOLAR
TRANSISTOR
Features
Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free
Benefits
High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation
Applications
U.P.S Welding Solar inverter Induction heating
C
G E
n-channel
PD - 96233B
IRG7PH42UPbF IRG7PH42U-EP
VCES = 1200V IC = 60A, TC = 100°C
TJ(max) =175°C VCE(on) typ. = 1.7V
CC
GC E
TO-247AC IRG7PH42UPbF
GC E
TO-247AD IRG7PH42U-EP
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM
ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TS...
