PD - 97480
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATI...
PD - 97480
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRG7PH42UD1PbF IRG7PH42UD1-EP
VCES = 1200V I NOMINAL = 30A
Features
Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package
C
G E
TJ(max) = 150°C
n-channel
C
VCE(on) typ. = 1.7V
Benefits
Device optimized for induction heating and soft switching applications High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF Rugged transient performance for increased reliability Excellent current sharing in parallel operation Low EMI
C
GC
E
TO-247AC IRG7PH42UD1PbF
E GC TO-247AD IRG7PH42UD1-EP
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFRM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE=15V Diode Continous Forward Current Diode Continous Forward Current Diode Repetitive Peak Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Mounting ...
