PD - 97498
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
• • • • • • • • Low VCE (ON) t...
PD - 97498
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free
IRG7PH46UDPbF IRG7PH46UD-EP
C
VCES = 1200V I NOMINAL = 40A
G E
TJ(max) = 150°C
Benefits
High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation
n-channel
C
VCE(on) typ. = 1.7V
C
Applications
U.P.S. Welding Solar Inverter Induction Heating
GC
E
TO-247AC IRG7PH46UDPbF
E GC TO-247AD IRG7PH46UD-EP
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current (Silicon Limited) Nominal Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range 300 (0.063 in. (1.6mm) from case) 10 lbf·in ...
