MCH6001

Ordering number : ENA1601 MCH6001 SANYO Semiconductors DATA SHEET MCH6001 Features NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifier Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : |S21e|2=16dB typ (f=1GHz). Composite type with 2 RF transistor MCH4020 in one package facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg Conditions Ratings 15 8 2 150 When mounted on glass epoxy substrate 1unit When mounted on glass epoxy substrate 400 600 150 -55 to +150 Unit V V V mA mW mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB=5V, IE=0A VEB=1V, IC=0A VCE=5V, IC=50mA VCE=5V, IC=50mA 60 13 16 Conditions Ratings min typ max 1.0 1.0 150 GHz Unit μA μA Marking : GT Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted. Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV ...