Fast Recovery Diodes
This product complies with RoHS Directive (EU 2002/95/EC).
Fast Recovery Diodes (FRD)
MA3DF40
Silicon Mesa type
For hi...
Description
This product complies with RoHS Directive (EU 2002/95/EC).
Fast Recovery Diodes (FRD)
MA3DF40
Silicon Mesa type
For high frequency rectification
For plasma display panel drive
Package
Features
Code
High switching speed trr
TO-220D-A1
Soft recovery
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Pin Name 1: Anode 2: Cathode 3: Anode
/ Repetitive peak reverse voltage
VRRM
370
V
Marking Symbol: MA3DF40
Non-repetitive peak reverse surge voltage VRSM
430
V
e pe) Forward current
TC = 25°C
IF
20
A
c e. d ty Non-repetitive peak forward surge current *
IFSM
100
A
n d stag tinue Junction temperature
Tj –40 to +150 °C
a e cle con Storage temperature
Tstg –40 to +150 °C
lifecy , dis Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Intemal Connection
1
2
3
ten tinufour Prondtiuncuted typed Electrical Characteristics Ta = 25°C±3°C
wing disco Parameter
Symbol
Conditions
Min Typ Max
in n follo ned Forwardvoltage
VF
IF = 20 mA
1.2
1.4
des , pla Reverse current
IRRM
VRRM = 370 V
10
a coed incluce type Reverse recovery time *
trr
IF = 0.5 A, IR = 1.0 A Irr = 0.25 A
20
35
tinu nan Thermal resistance (j-a)
Rth(j-c)
3.0
M is con inte Thermal resistance (j-c)
Rth(j-a)
63
/Dis , ma Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. ce pe 2. Absolute frequency of input and output is 10 MHz.
D nan e ty 3. *: trr measurement circu...
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