Document
2SK3656
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3656
VHF- and UHF-band Amplifier Applications
Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. • • • Output power: PO =28.4dBmW (typ) Gain: GP = 15.4dB (typ) Drain efficiency: ηD = 64% (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS(Note 1) ID PD (Note 2) Tch Tstg Rating 7.5 3.5 0.5 3 150 −45~150 Unit V V A W °C °C
JEDEC JEITA
⎯
SC-62
Note:
Using continuously under heavy loads (e.g. the application of TOSHIBA 2-5K1D high temperature/current/voltage and the significant change in Weight: 0.05 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Operating Ranges: 0~3.5V Note 2: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
Part No. (or abbreviation code)
W
C
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Lot No.
1
2
3
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1. Gate 2. Source 3. Drain
Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle.
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Electrical Characteristics (Ta = 25°C)
Characteristics Output power Drain efficiency Power gain Threshold voltage Drain cut-off current Gate-source leakage current Symbol PO ηD GP Vth IDSS IGSS ⎯ Test Condition VDS = 3.6 V, Iidle = 50 mA (VGS = adjust), f = 470 MHz, Pi = 13dBmW, VDS = 3.6 V, ID =0.5 mA VDS = 7.5 V, VGS = 0 V VGS = 3.5 V, VDS = 0 V VDS = 3.6 V, f = 470 MHz, Pi = 13dBmW, Po = 27dBmW (VGS = adjust), VSWR LOAD 10:1 all phase Min 27.5 50 ⎯ 0.2 ⎯ ⎯ Typ. 28.4 64 15.4 ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ 1.2 10 5 Unit dBmW % dB V μA μA ⎯
Load Mismatch
(Note 3)
No Degradation
Note 3: These characteristic values are measured using measurement tools specified by Toshiba.
(Test Condition: f = 470 MHz, VDS = 3.6 V, Iidle = 50 mA, Pi = 13 dBmW)
C6 Pi ZG = 50 Ω C1 C2 C3 C8 L1 R2 C9 L2 C4 C10 C5 C7 PO ZL = 50 Ω
Output Power Test Fixture
R1 VGS
VDS R1: 6.8 kΩ R2: 56 Ω
C1: 7 pF C2: 10 pF C3: 5 pF C4: 13 pF C5: 8 pF C6: 2200 pF C7: 2200 pF C8: 10000 pF C9: 2200 pF C10: 10000 pF
L1: φ0.6 mm enamel wire, 5.5ID, 5T L2: φ0.6 mm enamel wire, 5.5ID, 7T
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Po, Gp, ηD -Pi
40
Gp, ηD -Iidle
80
f =470MHz Iidle=50mA 35 Vdd=3.6V OUTPUT POWER Po(dBmW) POWER GAIN Gp(dB)
30
20
70
f =470MHz Pi=13dBmW Vdd=3.6V
80
18
76
DRAIN EFFICIENCY ηD(%)
25
50
16
72
20
40
15
30
14
68
10
20
Po (dBmW)
5
12
10
64
Gp (dB) η (%)
-5 0 5 10 15 20
Gp (dB)
10 0 20 40 60 80
0 -10
0
η (%)
60 100
INPUT POWER Pi(dBmW)
Po-Pi
40
GATE IDLE CURRENT Iidle(mA)
Pi-Idd
350
f =470MHz Vdd=3.6V
f =470MHz Vdd=3.6V
35
300
OUTPUT POWER Po(dBmW)
DRAIN CURRENT Idd(mA)
30
250
25
200
20
150
15
10
100
Iidle=30mA
5
Iidle=50mA Iidle=70mA
-5 0 5 10 15 20
50
Iidle=30mA Iidle=50mA Iidle=70mA
-5 0 5 10 15 20
0 -10
0 -10
INPUT POWER Pi(dBmW)
INPUT POWER Pi(dBmW)
Gp, ηD -Vdd
20
Po-Pi
100
f =470MHz Iidle=50mA Pi=13dBmW
40
f =470MHz Iidle=50mA
35
90
18
OUTPUT POWER Po(dBmW)
DRAIN EFFICIENCY ηD(%)
30
POWER GAIN Gp(dB)
16
80
25
20
14
70
15
10
12 www.DataSheet4U.com
60
Vdd=3.0V
5
Gp (dB)
10 2 2.5 3 3.5 4
Vdd=3.6V Vdd=4.2V
-5 0 5 10 15 20
η (%)
4.5 5
50
0 -10
DRAIN VOLTAGE Vdd(V)
INPUT POWER Pi(dBmW)
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DRAIN EFFICIENCY ηD(%)
60
POWER GAIN Gp(dB)
2SK3656
Pi-Idd
400
f =470MHz Iidle=50mA
350
DRAIN CURRENT Idd(mA)
300
250
200
150
100
Vdd=3.0V
50
Vdd=3.6V Vdd=4.2V
0 -10
-5
0
5
10
15
20
INPUT POWER Pi(dBmW)
Note 4: These are only typical curves and devices are not necessarily guaranteed at these curves.
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RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN GENERAL
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire sys.