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2SK3658 Dataheets PDF



Part Number 2SK3658
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3658 Datasheet2SK3658 Datasheet (PDF)

2SK3658 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK3658 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement−mode : RDS (ON) = 0.23 Ω (typ.) : |Yfs| = 2.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 60 V) : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 .

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2SK3658 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK3658 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement−mode : RDS (ON) = 0.23 Ω (typ.) : |Yfs| = 2.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 60 V) : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD Tch Tstg Pulse (Note 1) Rating 60 60 ±20 2 6 0.5 1.5 150 −55 to 150 Unit V V V A W W °C °C 3 1 2 Drain power dissipation (Tc = 25°C) Drain power dissipation Channel temperature Storage temperature range (Note 2) JEDEC JEITA TOSHIBA ⎯ SC-62 2-5K1B Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Weight: 0.05 g (typ.) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Rth (ch−a) Max 250 Unit °C / W This transistor is an electrostatic sensitive device. Please handle with caution. Marking Lot no. www.DataSheet4U.com Z H Week of manufacture Year of manufacture: last decimal digit of the year of manufacture Product no. (abbr.) 1 2006-11-17 2SK3658 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD ≈ 48 V, VGS = 10 V, ID = 2 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 1 A VGS = 10 V, ID = 1 A VDS = 10 V, ID = 1 A Min — — 60 0.8 — — 1.0 — — — — Typ. — — — — 0.33 0.23 2.0 140 20 65 140 Max ±10 100 — 2.0 0.44 0.30 — — — — — pF Unit μA μA V V Ω S Turn−on time Switching time Fall time — 210 — ns — 470 — Turn−off time Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge — — — — 1600 5.0 3.6 1.4 — — — — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr IDR = 2 A, VGS = 0 V IDR = 2 A, VGS = 0 V dIDR / dt = 50 A / μs Test Condition — — Min — — — — — Typ. — — — 100 40 Max 2 6 −1.5 — — Unit A A V ns nC www.DataSheet4U.com 2 2006-11-17 2SK3658 www.DataSheet4U.com 3 2006-11-17 2SK3658 www.DataSheet4U.com 4 2006-11-17 2SK3658 www.DataSheet4U.com 5 2006-11-17 2SK3658 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Uni.


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