2PG001

This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High speed hall time: tf = 250 nsec(typ.)  Package  Code TO-220F-A1  Marking Symbol: 2PG001 Unit V V A A W W °C °C E G  Absolute Maximum Ratings TC = 25°C Parameter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current * Power dissipation Junction temperature Storage temperature Note) *: PW ≤ 10 us, Duty ≤ 1.0% Symbol VCES VGES IC ICP Ta = 25°C PC Tj Tstg Rating 300 ±30 30 120 40 2.0 150 –55 to +150  Pin Name 1. Gate 2. Collector 3. Emitter  Internal Connection C  Electrical Characteristics TC = 25°C±3°C Parameter Collector-emitter voltage (E-B short) Collector-emitter cutoff current (E-B short) Gate-emitter cutoff current (E-B short) Gate-emitter threshold voltage Collector-emitter saturation voltage Short-circuit input capacitance (Common emitter) Short-circuit output capacitance (Common emitter) Reverse transfer capacitance (Common emitter) Gate charge load Gate-emitter charge Gate-collector charge Turn-on delay time Rise time Turn-off delay time www.DataSheet4U.com Fall time Symbol VCES ICES IGES VGE(th) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf VCC = 150 V, IC = 30 A, RL ≈ 5 Ω, VGE = 15 V VCC = 150 V, IC = 30 A, VGE = 15 V VCE = 25 V, VGE =...