RF Power MOSFET
Directed Energy, Inc.
An
DE275-501N16A
RF Power MOSFET
Preliminary Data Sheet
IXYS Company
N-Channel Enhancement Mode...
Description
Directed Energy, Inc.
An
DE275-501N16A
RF Power MOSFET
Preliminary Data Sheet
IXYS Company
N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB RthJHS TJ TJM Tstg TL Weight Symbol Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified 1.6mm (0.063 in) from case for 10 s
VDSS ID25 RDS(on) PDHS
Maximum Ratings 500 500 ±20 ±30 16 98 16 20 5 >200 375 3.0 0.33 -55…+150 150 -55…+150 300 2 V V V V A A A mJ V/ns V/ns W W K/W °C °C °C °C g
Features
SG1 SG2 GATE
= = = =
500 V 16 A .5 Ω 375 W
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Tc = 25°C Derate 3.0W/°C above 25°C Tc = 25°C
DRAIN
SD1
SD2
Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power − −
cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Low gate charge and capacitances
min. VDSS VGS(th)
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VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C TJ = 125°C VGS = 0 VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 15 V, ID = 0.5ID25, pulse test
t...
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