RF Power MOSFET
Directed Energy, Inc.
An
♦ ♦ ♦ ♦ ♦
DE275X2-102N06A
RF Power MOSFET
Preliminary Data Sheet
IXYS Company
Common Source ...
Description
Directed Energy, Inc.
An
♦ ♦ ♦ ♦ ♦
DE275X2-102N06A
RF Power MOSFET
Preliminary Data Sheet
IXYS Company
Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching
VDSS ID25 RDS(on) PDHS
= = = =
1000 V 6A 2.0 Ω 750 W
The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.
Unless noted, specifications are for each output device
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS
(1) (1)
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Tc = 25°C, Derate 6.0W/°C above 25°C Tc = 25°C
Maximum Ratings 1000 1000 ±20 ±30 6 48 6 20 5 >200 750 5.0 0.17 -55…+150 150 -55…+150 V V V V A A A mJ V/ns V/ns W W K/W °C °C °C °C g
SG1 SD1 SD2 SG2 GATE 1 GATE 2 DRAIN 1 DRAIN 2
Features
PDAMB
Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power − −
cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Low gate charge and capacitances
RthJHS (1) TJ TJM Tstg TL Weight Symbol Test Conditions
1.6mm (0.063 in) fro...
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