10N80

UNISONIC TECHNOLOGIES CO., LTD 10N80 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 1.1Ω @ VGS=10V, ID=5.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N80L-TF1-T 10N80G-TF1-T 10N80L-TF2-T 10N80G-TF2-T 10N80L-T3P-T 10N80G-T3P-T 10N80L-TQ2-T 10N80G-TQ2-T 10N80L-TQ2-R 10N80G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-3P TO-263 TO-263 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-218.N 10N80  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R502-218.N 10N80 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage Continuous Drain Current (TC = 25°С) VGSS ID ±30 V 10 A Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) IDM EAS 20 A 770 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.2 V/ns Power Dissipatio...