10N90

UNISONIC TECHNOLOGIES CO., LTD 10N90 Preliminary Power MOSFET 10 Amps, 900 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION 1 TO-220 The UTC10N90 is a N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 10N90 is generally applied in high efficiency switch mode power supply. 1 TO-220F1 „ FEATURES * Lower Leakage Current: 25µA (Max.) @ VDS = 900V * Improved Gate Charge „ SYMBOL 2.Drain 1.Gate 3.Source „ ORDERING INFORMATION Package TO-220 TO-220F1 S: Source Pin Assignment 1 2 3 G D S G D S Packing Tube Tube Ordering Number Lead Free Halogen Free 10N90L-TA3-T 10N90G-TA3-T 10N90L-TF1-T 10N90G-TF1-T Note: Pin Assignment: G: Gate D: Drain www.DataSheet4U.com www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-502.a 10N90 „ PARAMETER Drain-Source Voltage Gate-Source Voltage Preliminary SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RATINGS UNIT 900 V ±30 V Continuous 10 A Drain Current Pulsed (Note 1) 40 A Avalanche Current (Note 1) 10 A Single Pulsed (Note 2) 794 mJ Avalanche Energy Repetitive (Note 1) 28 mJ Peak Diode Recovery dv/dt (Note 3) 1.5 V/ns TO-220 156 W Power Dissipation PD TO-220F1 50 W Junction Temperature TJ +150 ...