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18N50 Dataheets PDF



Part Number 18N50
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL MOSFET
Datasheet 18N50 Datasheet18N50 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N50 is a N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance and high switching speed. This device is generally applied in active power factor correction and high efficient switched mo.

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UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N50 is a N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance and high switching speed. This device is generally applied in active power factor correction and high efficient switched mode power supplies.  FEATURES * RDS(ON) ≤ 0.32 Ω @ VGS=10V, ID=9.0A * High switching speed * 100% avalanche tested  SYMBOL 2.Drain 1 TO-220 1 TO-220F 11 TO-220F1 TO-220F2 1 TO-220F3 1 TO-247 11 TO-3P TO-3PB 1 TO-263 1.Gate 3.Source www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-477.S 18N50 Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 18N50L-TA3-T 18N50G-TA3-T 18N50L-TF1-T 18N50G-TF1-T 18N50L-TF2-T 18N50G-TF2-T 18N50L-TF3T-T 18N50G-TF3T-T 18N50L-TF3-T 18N50G-TF3-T 18N50L-T3B-T 18N50G-T3B-T 18N50L-T3P-T 18N50G-T3P-T 18N50L-T47-T 18N50G-T47-T 18N50L-TQ2-T 18N50G-TQ2-T 18N50L-TQ2-R 18N50G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F3 TO-220F TO-3PB TO-3P TO-247 TO-263 TO-263 Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel 18N50G-TA3-T (1) Packing Type (2) Package Type (3) Green Package (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2, (2) TF3T: TO-220F3, TF3: TO-220F, TQ2: TO-263, (2) T3B: TO-3PB, T3P: TO-3P, T47: TO-247 (3) G: Halogen Free and Lead Free, L: Lead Free  MARKING Lot Code UTC 18N50 1 L: Lead Free G: Halogen Free Date Code UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-477.S 18N50 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed (Note 2) Avalanche Current (Note 2) Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) VDSS VGSS ID IDM IAR EAS dv/dt 500 V ±30 V 18 A 72 A 13 A 845 mJ 3.2 V/ns TO-220/TO-263 235 W Power Dissipation TO-220F/TO-220F1 TO-220F2/TO-220F3 TO-3P/TO-3PB PD 40 W 380 W TO-247 357 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °С °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L=10mH, IAS=13A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤18A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C  THERMAL CHARACTERISTICS PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-220F3/TO-263 TO-3P/TO-3PB.


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