Document
UNISONIC TECHNOLOGIES CO., LTD
18N50
Power MOSFET
18A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 18N50 is a N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.
This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance and high switching speed.
This device is generally applied in active power factor correction and high efficient switched mode power supplies.
FEATURES
* RDS(ON) ≤ 0.32 Ω @ VGS=10V, ID=9.0A * High switching speed * 100% avalanche tested
SYMBOL
2.Drain
1 TO-220
1 TO-220F
11
TO-220F1
TO-220F2
1 TO-220F3
1 TO-247
11 TO-3P
TO-3PB
1 TO-263
1.Gate
3.Source
www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-477.S
18N50
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
18N50L-TA3-T
18N50G-TA3-T
18N50L-TF1-T
18N50G-TF1-T
18N50L-TF2-T
18N50G-TF2-T
18N50L-TF3T-T
18N50G-TF3T-T
18N50L-TF3-T
18N50G-TF3-T
18N50L-T3B-T
18N50G-T3B-T
18N50L-T3P-T
18N50G-T3P-T
18N50L-T47-T
18N50G-T47-T
18N50L-TQ2-T
18N50G-TQ2-T
18N50L-TQ2-R
18N50G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F1 TO-220F2 TO-220F3 TO-220F TO-3PB
TO-3P TO-247 TO-263 TO-263
Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS GDS GDS GDS
Packing
Tube Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel
18N50G-TA3-T
(1) Packing Type (2) Package Type (3) Green Package
(1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2, (2) TF3T: TO-220F3, TF3: TO-220F, TQ2: TO-263, (2) T3B: TO-3PB, T3P: TO-3P, T47: TO-247 (3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
Lot Code
UTC 18N50
1
L: Lead Free G: Halogen Free
Date Code
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
2 of 8
QW-R502-477.S
18N50
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed (Note 2)
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
VDSS VGSS
ID IDM IAR EAS dv/dt
500 V ±30 V 18 A 72 A 13 A 845 mJ 3.2 V/ns
TO-220/TO-263
235 W
Power Dissipation
TO-220F/TO-220F1 TO-220F2/TO-220F3 TO-3P/TO-3PB
PD
40 W 380 W
TO-247
357 W
Junction Temperature Storage Temperature
TJ TSTG
+150 -55 ~ +150
°С °С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L=10mH, IAS=13A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤18A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL CHARACTERISTICS
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-220F3/TO-263
TO-3P/TO-3PB.