22N60

UNISONIC TECHNOLOGIES CO., LTD 22N60 022A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) < 0.35Ω @ VGS=10V, ID=13A * Ultra Low Gate Charge ( Typical 150 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 36 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 22N60L-T47-T 22N60G-T47-T 22N60L-T3P-T 22N60G-T3P-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-247 TO-3P Pin Assignment 123 GDS GDS Packing Tube Tube www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-216.J 22N60 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 V ±30 V Avalanche Current Continuous Drain Current IAR 22 A ID 22 A Pulsed Drain Current (Note 1) Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt (Note 3) IDM EAS EAR dv/dt 88 A 380 mJ 37 mJ 18 V/ns Power Dissipation TO-247 TO-3P PD 416 446 W Junction Temperature Operating Temperature TJ TOPR 150 -55 ~ +150 °C °C Storage Temperature TSTG -55 ~ +150 °C Note: Abso...