25N06

UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR „ DESCRIPTION The UTC 25N06 is an N-channel enhancement mode Power MOSFET, which provides low gate charge, avalanche rugged technology, and so on. The UTC 25N06 is universally applied in DC-DC & DC-AC converters, motor control, high current, high speed switching, solenoid and relay drivers, regulators, audio amplifiers, automotive environment. „ FEATURES * Low Gate Charge * RDS(on) = 0.048 Ω (TYP.) * Avalanche Rugged Technology * 100% Avalanche Tested * Repetitive Avalanche at 100°C * High Current Capability * Operating Temperature: 175°C * Application Oriented Characterization „ SYMBOL 2.Drain 1.Gate 3.Source „ ORDERING INFORMATION Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free 25N06L-TA3-T 25N06G-TA3-T Note: G: Gate, D: Drain, S: Source www.DataSheet4U.com www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-450.a 25N06 „ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0) VDS 60 V Drain-Gate Voltage (RGS=20kΩ) VDGR 60 V Gate-Source Voltage VGS ± 20 V TC=25°C 25 A Drain Current (Continuous) ID TC=100°C 17 A Drain Current (Pulsed) (Note 2) IDM 100 A Single Pulse Avalanche Energy EAS 100 mJ (starting TJ =25°C, ID =25A, VDD =25 V) Total Dissipation at TC=25°C PD 90 W Maximum Operating Junction Temperature TJ 175 °C St...