Document
UNISONIC TECHNOLOGIES CO., LTD
5302D
NPN SILICON TRANSISTOR
HIGH VOLTAGE NPN TRANSISTOR WITH DIODE
DESCRIPTION
The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications.
FEATURES
* Internal free-wheeling diode * Makes efficient anti-saturation operation * Low variable storage-time spread * Low base drive * Very suitable for half bridge light ballast application
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
-
5302DG-AA3-R
SOT-223
5302DL-T60-K
5302DG-T60-K
TO-126
5302DL-T92-B
5302DG-T92-B
TO-92
5302DL-T92-K
5302DG-T92-K
TO-92
5302DL-T92-R
5302DG-T92-R
TO-92
5302DL-TM3-T
5302DG-TM3-T
TO-251
5302DL-TN3-R
5302DG-TN3-R
TO-252
Note: Pin assignment: E: Emitter B: Base
C: Collector
Pin Assignment 123 BCE BCE ECB ECB ECB BCE BCE
Packing
Tape Reel Bulk
Tape Box Bulk
Tape Reel Tube
Tape Reel
5302DL-T60-T
(1)Packing Type (2)Package Type (3)Green Package
(1) B: Tape Box, K: Bulk, T: Tube, R: Tape Reel (2) T60: TO-126, T92: TO-92, TM3: TO-251,
TN3: TO-252, AA3: SOT-223 (3) L: Lead Free, G: Halogen Free and Lead Free
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R213-018.H
5302D
MARKING
SOT-223
TO-126
NPN SILICON TRANSISTOR
TO-251 / TO-252
TO-92
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R213-018. H
5302D
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
800 V
Collector-Emitter Voltage
VCEO
400 V
Emitter-Base Voltage
VEBO
10 V
Collector Current
IC 2 A
Collector Peak Current (tP<5ms)
ICM 4 A
Base Current Base Peak Current (tP<5ms)
TO-126
IB IBM
1A
2A 12.5
Power Dissipation (TC≤25°С)
TO-92 TO-251/ TO-252
PD
1.6 25
W
SOT-223
1
Junction Temperature Storage Temperature
TJ TSTG
+150 -65 ~ +150
°С °С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
TO-126
Junction to Ambient
TO-92 TO-251/ TO-252
SOT-223
TO-126
Junction to Case
TO-92 TO-251/ TO-252
SOT-223
SYMBOL θJA
θJC
RATINGS 122 160 100 175 10 80 5 125
UNIT °С/W
°С/W
ELECTRICAL CHARACTERISTICS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage
BVCEO BVCBO
Emitter-Base Breakdown Voltage Collector Cutoff Current
BVEBO ICBO
Emitter Cutoff Current
IEBO
ON CHARACTERISTICS
DC Current Gain
hFE1 hFE2
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
hFE3 VCE(SAT1) VCE(SAT2) VBE(SAT1) VBE(SAT2)
SWITCHING CHARACTERISTICS
Turn On Time Fall Time
tON tF
Storage Time
tSTG
DIODE
Forward Voltage Drop
VF
Fall Time
tF
Note: Pulsed duration = 300μS, Duty cycle≤2%
I.