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5302D Dataheets PDF



Part Number 5302D
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description HIGH VOLTAGE NPN TRANSISTOR
Datasheet 5302D Datasheet5302D Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE  DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications.  FEATURES * Internal free-wheeling diode * Makes efficient anti-saturation operation * Low variable storage-time spread * Low base drive * Very suitable for half bridge light ballast application  SYMBOL  ORDERING INFORMATION Ordering Number Lead Fre.

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UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE  DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications.  FEATURES * Internal free-wheeling diode * Makes efficient anti-saturation operation * Low variable storage-time spread * Low base drive * Very suitable for half bridge light ballast application  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package - 5302DG-AA3-R SOT-223 5302DL-T60-K 5302DG-T60-K TO-126 5302DL-T92-B 5302DG-T92-B TO-92 5302DL-T92-K 5302DG-T92-K TO-92 5302DL-T92-R 5302DG-T92-R TO-92 5302DL-TM3-T 5302DG-TM3-T TO-251 5302DL-TN3-R 5302DG-TN3-R TO-252 Note: Pin assignment: E: Emitter B: Base C: Collector Pin Assignment 123 BCE BCE ECB ECB ECB BCE BCE Packing Tape Reel Bulk Tape Box Bulk Tape Reel Tube Tape Reel 5302DL-T60-T (1)Packing Type (2)Package Type (3)Green Package (1) B: Tape Box, K: Bulk, T: Tube, R: Tape Reel (2) T60: TO-126, T92: TO-92, TM3: TO-251, TN3: TO-252, AA3: SOT-223 (3) L: Lead Free, G: Halogen Free and Lead Free www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R213-018.H 5302D  MARKING SOT-223 TO-126 NPN SILICON TRANSISTOR TO-251 / TO-252 TO-92 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R213-018. H 5302D NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 10 V Collector Current IC 2 A Collector Peak Current (tP<5ms) ICM 4 A Base Current Base Peak Current (tP<5ms) TO-126 IB IBM 1A 2A 12.5 Power Dissipation (TC≤25°С) TO-92 TO-251/ TO-252 PD 1.6 25 W SOT-223 1 Junction Temperature Storage Temperature TJ TSTG +150 -65 ~ +150 °С °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER TO-126 Junction to Ambient TO-92 TO-251/ TO-252 SOT-223 TO-126 Junction to Case TO-92 TO-251/ TO-252 SOT-223 SYMBOL θJA θJC RATINGS 122 160 100 175 10 80 5 125 UNIT °С/W °С/W  ELECTRICAL CHARACTERISTICS (TA = 25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage BVCEO BVCBO Emitter-Base Breakdown Voltage Collector Cutoff Current BVEBO ICBO Emitter Cutoff Current IEBO ON CHARACTERISTICS DC Current Gain hFE1 hFE2 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage hFE3 VCE(SAT1) VCE(SAT2) VBE(SAT1) VBE(SAT2) SWITCHING CHARACTERISTICS Turn On Time Fall Time tON tF Storage Time tSTG DIODE Forward Voltage Drop VF Fall Time tF Note: Pulsed duration = 300μS, Duty cycle≤2% I.


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