Document
UNISONIC TECHNOLOGIES CO., LTD
8050S
NPN SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
DESCRIPTION
The UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.
FEATURES
*Collector current up to 700mA *Collector-Emitter voltage up to 20V * Complementary to UTC 8550S
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
- 8050SG-x-AE3-R
8050SL-x-T92-B
8050SG-x-T92-B
8050SL-x-T92-K
8050SG-x-T92-K
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
SOT-23 TO-92 TO-92
Pin Assignment 123 EBC ECB ECB
Packing
Tape Reel Tape Box
Bulk
MARKING
SOT-23
D9_DG
TO-92
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-001.I
8050S
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
30 V
Collector-Emitter Voltage
VCEO
20 V
Emitter-Base Voltage
VEBO
5V
Collector Current
IC 700 mA
Collector Dissipation(TA=25°C)
SOT-23 TO-92
PC
350 mW 1W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current
DC Current Gain (note)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance
SYMBOL
TEST CONDITIONS
BVCBO IC = 100μA, IE = 0 BVCEO IC = 1mA, IB = 0
BVEBO ICBO
IE = 100μA, IC =0 VCB = 30V,IE = 0
IEBO hFE1
VEB = 5V, IC = 0 VCE = 1V, IC = 1mA
hFE2 hFE3
VCE = 1V, IC = 150 mA VCE = 1V, IC = 500mA
VCE(SAT) IC = 500mA, IB = 50mA VBE(SAT) IC = 500mA, IB = 50mA
VBE(SAT) VCE = 1V, IC = 10mA fT VCE = 10V, IC = 50mA
Cob VCB = 10V, IE = 0, f = 1MHz
MIN TYP MAX UNIT 30 V 20 V 5V
1 uA 100 nA 100 120 400 40 0.5 V 1.2 V 1.0 V 100 MHz 9.0 pF
CLASSIFICATION OF hFE2
RANK RANGE
C 120-200
D 160-300
E 280-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-001.I
8050S
TYPICAL CHARACTERISTICS
Current Gain-Bandwidth Product, f(MHz)
Collector Current, Ic(mA)
Collector Current, Ic(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Capacitance, Cob (pF)
Saturation Voltage (mV)
DC Current Gain, hFE
NPN SILICON TRANSISTOR
3 of 4
QW-R206-001.I
8050S
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R206-001.I
.