2SC2026

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High Power Gain Gpe= 15dB TYP. @ f= 500MHz ·High Gain Bandwidth Product fT= 2.0GHz TYP. ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise amplifiers in the VHF~UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 14 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2026 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 0.1 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 25 200 fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 15 2.0 GHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 0.75 1.1 pF Gpe Power Gain NF Noise Figure VCE= 10 V,IC= 10mA; f= 500MHz VCE= 10 V,IC= 3mA; f= 500MHz; RG= 50Ω 13 15 dB 3 4 dB NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time wi...