AlGaInP/Si Hyper Red Chip ---TK540UOH
1. Scope
‧ AlGaInP High- Brightness LED chip.
2. Structure
‧AlGaInP on Silicon ‧N...
AlGaInP/Si Hyper Red Chip ---TK540UOH
1. Scope
‧ AlGaInP High- Brightness LED chip.
2. Structure
‧AlGaInP on Silicon ‧N Electrode (cathode) side ‧P Electrode (anode) side : Gold : Gold Alloy
3. Size
‧Chip size : 40 mil × 40 mil ( 1000 um × 1000 um ) ‧Chip height : 200 ± 10 um ‧Pattern drawing : per fig. 1
4. Electro-Optical Characteristics
Parameter Forward Voltage Reverse Voltage Luminous Intensity Wavelength Spectrum Width of Half Value Symbol VF IR IV λd Δλ Condition IF =350 mA IR = 10 V IF =350 mA IF =20 mA IF =20 mA Min. Typ. 2.5 (Ta = +25 ℃) Max. Unit 2.7 V 10 µA mcd 630 nm nm
※ 620
625 20
Maximum reverse-biased voltage < 60V; therefore, VZ test is forbidden.
※ ‧Rank R : min.≧4300 ‧Rank S : min.≧5000 ‧Rank T : min.≧5700
AlInGaP Epi-layers
950 1000
N-electrode
Si substrate P-electrode
1000
200
*Recommendation for bonding condition :
bonding force 40 g, bonding temperature 280℃, bonding time 20 ms.
*Storage condition： temperature 0 ~ 35℃, humidity≦60% RH.
www.DataSheet4U.com
Unit：µm fig. 1
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2006.Nov
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