STV40NE03L-20
N - CHANNEL 30V - 0.014Ω - 40A - PowerSO-10 STripFET™ MOSFET
TYPE STV40NE03L-20
s s s s
V DSS 30 V
R DS(...
STV40NE03L-20
N - CHANNEL 30V - 0.014Ω - 40A - PowerSO-10 STripFET™ MOSFET
TYPE STV40NE03L-20
s s s s
V DSS 30 V
R DS( on ) < 0.020 Ω
ID 40 A
TYPICAL RDS(on) = 0.014 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE A 100 oC APPLICATION ORIENTED CHARACTERIZATION
10
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
1
PowerSO-10
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS ID ID I DM ( ) P tot Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C
o o o
Value 30 30 ± 20 40 28 160 80 0.53 7 -65 to 175 175
( 1) ISD ≤ 40 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W /o C V/ns
o o
Derating F actor www.DataSheet4U.com dv/dt( 1 ) Peak Diode Recovery voltage slope T st g Tj May 2000 Storage T emperature Max. Operating Junction Temperat...
