DatasheetsPDF.com

MT29F32G08AECBB Dataheets PDF



Part Number MT29F32G08AECBB
Manufacturers Micron
Logo Micron
Description Asynchronous/Synchronous NAND
Datasheet MT29F32G08AECBB DatasheetMT29F32G08AECBB Datasheet (PDF)

Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb, 128Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABABA, MT29F32G08AFABA, MT29F64G08A[J/K/M]ABA, MT29F128G08AUABA, MT29F16G08ABCBB, MT29F32G08AECBB, MT29F64G08A[K/M]CBB, MT29F128G08AUCBB Features • Open NAND Flash Interface (ONFI) 2.1-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 4320 bytes (4096 + 224 bytes) – Block size: 128 pages (512K +28K bytes) – Plane size: 2 planes x 2048 block.

  MT29F32G08AECBB   MT29F32G08AECBB



Document
Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb, 128Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABABA, MT29F32G08AFABA, MT29F64G08A[J/K/M]ABA, MT29F128G08AUABA, MT29F16G08ABCBB, MT29F32G08AECBB, MT29F64G08A[K/M]CBB, MT29F128G08AUCBB Features • Open NAND Flash Interface (ONFI) 2.1-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 4320 bytes (4096 + 224 bytes) – Block size: 128 pages (512K +28K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 16Gb: 4096 blocks; 32Gb: 8192 blocks; 64Gb: 16,384 blocks; 128Gb: 32,768 blocks • Synchronous I/O performance – Up to synchronous timing mode 4 – Clock rate: 12ns (DDR) – Read/write throughput per pin: 166 MT/s • Asynchronous I/O performance – Up to asynchronous timing mode 4 – tRC/tWC: 25ns (MIN) • Array performance – Read page: 25µs (MAX) – Program page: 230µs (TYP) – Erase block: 700µs (TYP) • Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7–1.95V, 2.7–3.6V • Command set: ONFI NAND Flash Protocol • Advanced Command Set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Multi-plane commands – Multi-LUN operations – Read unique ID – Copyback • First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see www.DataSheet4U.com Error Management (page 107). • RESET (FFh) required as first command after poweron • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status • Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface • Copyback operations supported within the plane from which data is read • Quality and reliability – Data retention: 10 years – Endurance: 100,000 PROGRAM/ERASE cycles • Operating temperature: – Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC • Package – 52-pad LGA – 48-pin TSOP – 100-ball BGA Note: 1. The ONFI 2.1 specification is available at www.onfi.org. PDF: 09005aef838cada2 Rev. E 3/10 EN 1 Products and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb, 128Gb Asynchronous/Synchronous NAND Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Numbering MT 29F 16G 08 Micron Technology NAND Flash 29F = NAND Flash memory A B A B A WP ES :B Design Revision B = Second revision Production Status Blank = Production ES = Engineering sample Density 16G = 16Gb 32G = 32Gb .


MT29F16G08ABCBB MT29F32G08AECBB MT29F64G08AKCBB


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)