MMIC wideband amplifier
BGA2870
MMIC wideband amplifier
Rev. 3 — 13 July 2015
Product data sheet
1. Product profile
1.1 General description
S...
Description
BGA2870
MMIC wideband amplifier
Rev. 3 — 13 July 2015
Product data sheet
1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
Internally matched to 50 A gain of 31.1 dB at 500 MHz Output power at 1 dB gain compression = 4 dBm Supply current = 16.0 mA at a supply voltage of 2.5 V Reverse isolation > 52 dB up to 750 MHz Good linearity with low second order and third order products Noise figure = 3.2 dB at 500 MHz Unconditionally stable (K > 1) No output inductor required
1.3 Applications
LNB IF amplifiers General purpose low noise wideband amplifier for frequencies between
DC and 750 MHz
2. Pinning information
Table 1. Pin 1 2, 5 3 4 6
Pinning Description VCC GND2 RF_OUT GND1 RF_IN
Simplified outline Graphic symbol
654
1
6
3
123
4 2, 5
sym052
NXP Semiconductors
BGA2870
MMIC wideband amplifier
3. Ordering information
Table 2. Ordering information
Type number Package
Name
Description
BGA2870
-
plastic surface-mounted package; 6 leads
Version SOT363
4. Marking
Table 3. Marking Type number BGA2870
Marking code YC*
Description * = - : made in Hong Kong * = p : made in Hong Kong * = W : made in China * = t : made in Malaysia
5. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCC ICC...
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