Polar3 HiperFET Power MOSFETs
Advance Technical Information
Polar3TM HiperFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrins...
Description
Advance Technical Information
Polar3TM HiperFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3
VDSS ID25
RDS(on)
= 600V = 22A ≤ 360mΩ
TO-220AB (IXFP)
G
DS
Tab
TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 600 600 ± 30 ± 40 22 55 11 400 35 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g g G D S G D
S Tab
TO-247 (IXFH)
Tab D = Drain Tab = Drain
G = Gate S = Source Features
z z z z
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque TO-220 TO-3P TO-247
300 260 1.13 / 10 3.0 5.5 6.0
Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance
Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1.5mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 V V nA
z z z
High Power Density Easy to Mount Space Savings
Applications
z
25 μA 1.25 mA 360 mΩ
z z z z
VGS = 10V, ID = 0.5 ID25, Note 1
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