Polar3 HiperFET Power MOSFETs
Advance Technical Information
Polar3TM HiperFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrins...
Description
Advance Technical Information
Polar3TM HiperFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFQ28N60P3 IXFH28N60P3
VDSS ID25
RDS(on)
= 600V = 28A ≤ 260mΩ
TO-3P (IXFQ)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 600 600 ± 30 ± 40 28 70 14 500 35 695 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g
G D
S
Tab
TO-247 ( IXFH)
G
D
S
Tab
G = Gate S = Source
D = Drain Tab = Drain
Features
z z z z
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque TO-3P TO-247
300 260 1.13 / 10 5.5 6.0
Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance
Advantages
z z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 2.5mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C
Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 V V nA
z
High Power Density Easy to Mount Space Savings
Applications
z
25 μA 1.5 mA 260 mΩ
z z z z
VGS = 10V, ID = 0.5 ID25, Note 1
Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls
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