IXFL32N120P

Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL www.DataSheet4U.net IXFL32N120P VDSS ID25 RDS(on) trr = = ≤ ≤ 1200V 24A 340mΩ 300ns ISOPLUS i5-PakTM Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1200 1200 ± 30 ± 40 24 100 16 2 20 520 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ N/lb. g Advantages z z z z z G S D Isolated Tab G = Gate S = Source Features z D = Drain Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation Avalanche Rated Fast Intrinsic Diode Maximum Lead Temperature for Soldering Plastic Body for 10s 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s Mounting Force 300 260 2500 3000 40..120/4.5..27 8 FC Weight Easy Assembly Space Savings High Power Density Applications z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS , VGS = 0V Note 2, TJ = 125°C VGS = 10V, ID = 16A, Note 1 Characteristic Values Min. Typ. Max. 1200 3.5 6.5 ± 300 V V nA Switch-Mode and Resonant-Mode Power Supplies ...