IXFL60N80P

PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM (Electrically Isolated Back Surface) IXFL 60N80P VDSS ID25 = 800 V = 40 A RDS(on) ≤ 150 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL www.DataSheet4U.net Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω TC = 25° C Maximum Ratings 800 800 ±30 ±40 40 150 30 100 5 20 625 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C ISOPLUS264 TM (IXFL) G D S (Isolated Tab) D = Drain G = Gate S = Source Features l l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode l 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS IISOL ≤1 mA Mounting force t = 1 min t=1s 300 2500 3000 28..150 / 6.4..30 5 l VISOL FC Weight V~ V~ N/lb g l l Advantages l l l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT, Note 1 TJ = 125° C Charact...