IXFL80N50Q2

HiPerFETTM Power MOSFET Q2-Class (Electrically Isolated Tab) IXFL80N50Q2 VDSS = ID25 = RDS(on) ≤ ≤ trr 500V 55A 66mΩ 250ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC VISOL 1.6 mm (0.063 in.) from case for 10s Plastic body for 10s Mounting force 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 55 320 80 5 20 380 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 2500 3000 10 V V V V A A A J V/ns W °C °C °C °C °C N/lbs V~ V~ g ISOPLUS264TM( IXFL) G D S Isolated Tab G = Gate S = Source D = Drain Features Electrically isolated mounting tab Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Applications DC-DC converters Switched-mode and resonant-mode power supplies DC choppers Pulse generation Laser drivers Advantages 2500 V~ Electrical isolation ISOPLUS 264TM package for clip or spring mounting Space savings High power density www.DataSheet4U.net Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 500 3.0 5.5 ± 200 TJ = 125°C V V nA BVDSS VGS(th) IGSS IDSS...