IXFN100N50Q3

Advance Technical Information HiperFETTM Power MOSFET Q3-Class N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN100N50Q3 VDSS ID25 RDS(on) trr = = ≤ ≤ 500V 82A 49mΩ 250ns miniBLOC E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 500 500 ±30 ±40 82 300 100 5 50 960 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g Features z z z S G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. z z z International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z z High Power Density Easy to Mount Space Savings Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 50A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.5 6.5 V V Applications z z z ±200 nA 50 μA 2.5 mA 49 mΩ ...