HiPerFET Power MOSFETs
Advanced Technical Information
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr...
Description
Advanced Technical Information
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFN 20N120
VDSS ID25
D
= 1200 V = 20 A RDS(on) = 0.75 Ω ≤ 300 ns trr
G S
S
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ≤ 150°C, RG = 2 Ω TC= 25°C
Maximum Ratings 1200 1200 ± 30 ± 40 20 80 10 40 2 5 780 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D
G = Gate S = Source
D = Drain TAB = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Features International standard package
miniBLOC, with Aluminium nitride
isolation
50/60 Hz, RMS IISOL ≤ 1 mA
t = 1 min t=1s
2500 3000
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS)
rated
Md
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Weight
Low package inductance Fast intrinsic Rectifier
Applications DC-DC converters
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 100 2 0.75 V V nA µA mA Ω
Battery chargers Switched-mode and reso...
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