DatasheetsPDF.com

IXFN38N100Q2

IXYS Corporation

Power MOSFET

HiPerFETTM Power MOSFET IXFN38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, ...


IXYS Corporation

IXFN38N100Q2

File Download Download IXFN38N100Q2 Datasheet


Description
HiPerFETTM Power MOSFET IXFN38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet VDSS = 1000 V ID25 = 38 A RDS(on)= 0.25 Ω trr ≤ 300 ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings G S 1000 1000 ±30 ±40 38 152 38 60 5.0 20 890 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C V Features Double metal process for low gate resistance miniBLOC, with Aluminium nitride isolation Unclamped Inductive Switching (UIS) rated Low package inductance G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source VISOL 50/60 Hz, RMS, t = 1 minute Mounting torque Terminal connection torque 2500 Md Weight 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Fast intrinsic Rectifier Applications DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 V 5.0 V ±200 nA TJ = 25°C TJ = 125°C 50 mA 3 mA 0.25 Ω Switched-mode power supplies DC choppers and resonant-mode VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = ±30 V, VDS = 0 VDS =...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)