Power MOSFET
HiPerFETTM Power MOSFET
IXFN38N100Q2
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, ...
Description
HiPerFETTM Power MOSFET
IXFN38N100Q2
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet
VDSS = 1000 V ID25 = 38 A RDS(on)= 0.25 Ω trr ≤ 300 ns
miniBLOC, SOT-227 B (IXFN) E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings
G
S
1000 1000 ±30 ±40 38 152 38 60 5.0 20 890 -55 ... +150 150 -55 ... +150
V V V V A A A mJ J V/ns W °C °C °C V Features Double metal process for low gate resistance miniBLOC, with Aluminium nitride isolation Unclamped Inductive Switching (UIS) rated Low package inductance G = Gate S = Source
S D
D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
VISOL
50/60 Hz, RMS, t = 1 minute Mounting torque Terminal connection torque
2500
Md Weight
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Fast intrinsic Rectifier
Applications DC-DC converters
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 V 5.0 V ±200 nA TJ = 25°C TJ = 125°C 50 mA 3 mA 0.25 Ω
Switched-mode
power supplies DC choppers
and resonant-mode
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = ±30 V, VDS = 0 VDS =...
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