IXFP7N80PM

PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP7N80PM VDSS ID25 RDS(on) trr = = ≤ ≤ 800 3.5 1.44 250 V A Ω ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 800 800 ± 30 ± 40 3.5 18 4 20 300 10 50 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C OVERMOLDED TO-220 (IXTP...M) OUTLINE G Isolated Tab D S G = Gate S = Source D = Drain Features z 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque 300 260 z z z Md Weight 1.13/10 Nm/lb.in. 3.0 g z Plastic overmolded tab for electrical isolation Fast intrinsic diode International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 1 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V VGS = 10 V, ID = 3.5 A Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ±100 25 500 1.44 V V nA μA μA Ω Advantages z z z Easy to mount Space savings High power density © 2006 IXYS All rights reserved ...