Power MOSFET
PolarHVTM HiPerFET Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Di...
Description
PolarHVTM HiPerFET Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFP7N80PM
VDSS ID25 RDS(on) trr
= = ≤ ≤
800 3.5 1.44 250
V A Ω ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C
Maximum Ratings 800 800 ± 30 ± 40 3.5 18 4 20 300 10 50 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C
OVERMOLDED TO-220 (IXTP...M) OUTLINE
G
Isolated Tab D S
G = Gate S = Source
D = Drain
Features
z
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque
300 260
z z z
Md Weight
1.13/10 Nm/lb.in. 3.0 g
z
Plastic overmolded tab for electrical isolation Fast intrinsic diode International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 1 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V VGS = 10 V, ID = 3.5 A Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. 800 3.0 5.0 ±100 25 500 1.44 V V nA μA μA Ω
Advantages
z z z
Easy to mount Space savings High power density
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