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PESD5V0X1BL

NXP Semiconductors

Ultra low capacitance bidirectional ESD protection diodes

PESD5V0X1BA; PESD5V0X1BL Ultra low capacitance bidirectional ESD protection diodes Rev. 01 — 4 November 2008 Product dat...


NXP Semiconductors

PESD5V0X1BL

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Description
PESD5V0X1BA; PESD5V0X1BL Ultra low capacitance bidirectional ESD protection diodes Rev. 01 — 4 November 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device (SMD) plastic packages designed to protect one signal line from the damage caused by ESD and other transients. Table 1. Product overview Package NXP PESD5V0X1BA PESD5V0X1BL SOD323 SOD882 JEITA SC-76 very small leadless ultra small Package configuration Type number 1.2 Features I Bidirectional ESD protection of one line I ESD protection up to 9 kV I Ultra low diode capacitance: Cd = 0.9 pF I IEC 61000-4-2; level 4 (ESD) I Very low leakage current: IRM = 1 nA I AEC-Q101 qualified 1.3 Applications I I I I I I www.DataSheet4U.net USB interfaces Antenna protection 10/100/1000 Mbit/s Ethernet FireWire High-speed data lines Subscriber Identity Module (SIM) card protection I I I I I Cellular handsets and accessories Portable electronics Communication systems Computers and peripherals Audio and video equipment 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Per diode VRWM Cd reverse standoff voltage diode capacitance f = 1 MHz; VR = 0 V 0.9 5 1.3 V pF Parameter Conditions Min Typ Max Unit NXP Semiconductors PESD5V0X1BA; PESD5V0X1BL Ultra low capacitance bidirectional ESD protection diodes 2. Pinning information Table 3. Pin 1 2 Pinning Descri...




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