Document
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
Rev. 01 — 30 October 2008 Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device (SMD) plastic packages designed to protect one signal line from the damage caused by ESD and other transients. The devices may also be used for unidirectional ESD protection of up to two signal lines.
Table 1. Product overview Package NXP PESD5V0X1BQ PESD5V0X1BT SOT663 SOT23 JEDEC TO-236AB ultra small and flat lead very small Package configuration
Type number
1.2 Features
I Bidirectional ESD protection of one line I ESD protection up to 9 kV I Unidirectional ESD protection of up to I IEC 61000-4-2; level 4 (ESD) two lines I Ultra low diode capacitance: Cd = 0.9 pF I AEC-Q101 qualified I Very low leakage current: IRM = 1 nA
1.3 Applications
I USB interfaces I I I I I Antenna protection Radio Frequency (RF) protection 10/100/1000 Mbit/s Ethernet FireWire Asymmetric Digital Subscriber Line (ADSL) I High-speed data lines I Subscriber Identity Module (SIM) card protection I Computers, peripherals and printers I Cellular handsets and accessories I Portable electronics I Communication systems I Audio and video equipment
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NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
1.4 Quick reference data
Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Per diode VRWM Cd reverse standoff voltage diode capacitance f = 1 MHz; VR = 0 V
[1] [2]
Parameter
Conditions
Min -
Typ 0.9 2
Max 5 1.3 2.6
Unit V pF pF
[1] [2]
Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1. Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
2. Pinning information
Table 3. Pin 1 2 3 Pinning Description cathode (diode 1) cathode (diode 2) common anode
3 3
Simplified outline
Graphic symbol
PESD5V0X1BQ
1
2
1
2
006aaa154
PESD5V0X1BT 1 2 3 cathode (diode 1) cathode (diode 2) common anode
1 2 3 3
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1
2
006aaa154
3. Ordering information
Table 4. Ordering information Package Name PESD5V0X1BQ PESD5V0X1BT Description plastic surface-mounted package; 3 leads plastic surface-mounted package; 3 leads Version SOT663 SOT23 Type number
PESD5V0X1BQ_PESD5V0X1BT_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2008
2 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
4. Marking
Table 5. Marking codes Marking code[1] E6 U3* Type number PESD5V0X1BQ PESD5V0X1BT
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device Tj Tamb Tstg junction temperature ambient temperature storage temperature −55 −65 150 +150 +150 °C °C °C Parameter Conditions Min Max Unit
Table 7. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Per diode VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model)
[1]
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Parameter
Conditions
[1]
Min -
Max 9 10
Unit kV kV
Device stressed with ten non-repetitive ESD pulses.
Table 8. Standard Per diode
ESD standards compliance Conditions > 8 kV (contact) > 4 kV
IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model)
PESD5V0X1BQ_PESD5V0X1BT_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2008
3 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
001aaa631
IPP 100 % 90 %
10 % tr = 0.7 ns to 1 ns 30 ns 60 ns t
Fig 1.
ESD pulse waveform according to IEC 61000-4-2
6. Characteristics
Table 9. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Per diode VRWM IRM VBR Cd reverse standoff voltage reverse leakage current VRWM = 5 V breakdown voltage diode capacitance IR = 5 mA f = 1 MHz VR = 0 V
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Conditions
Min 5.8
[1] [2]
Typ 1 7.5 0.9 2 0.8 1.7 -
Max 5 100 9.5 1.3 2.6 1.2 2.3 100
Unit V nA V pF pF pF pF Ω
-
VR = 5 V rdif
[1] [2]
[1] [2]
differential resistance
IR = 1 mA
Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1. Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
PESD5V0X1BQ_PESD5V0X1BT_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2008
4 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
1.0 Cd (pF) 0.96
006aab249
2.0 Cd (pF) 1.9
006aab348
0.92 1.8 0.88
1.7 0.84
0.80 0 1 2 3 4 VR (V) 5
1.6 0 1 2 3 4 VR (V) 5
bidirectional configuration f = 1 MHz; Tamb = 25 °C
unidirectional configuration f = 1 MHz; Tamb = 25 °C
Fig 2.
Diode capacitance as a function of reverse .