P-Channel Enhancement Mode Power MosFET
SSL4407
Elektronische Bauelemente -50A, -30V,RDS(ON) 14m£[
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Prod...
Description
SSL4407
Elektronische Bauelemente -50A, -30V,RDS(ON) 14m£[
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SSL4407 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications
such as DC/DC converters and high efficiency switching circuit.
Features
* Lower On-Resistance * Simple Drive Requirement * Fast Switching Characteristics
D
REF. A b L4 c L3 L1 E
G
S
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.00 0.30 0.36 0.5 1.50 REF. 2.29 2.79 9.80 10.4
REF. c2 b2 D e L θ L2
Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.8 o o 0 8 1.27 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage
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Symbol
VDS VGS ID@TA=25 oC ID@TA=100 C IDM PD@TA=25 C
o o
Ratings
-30
±25 -50 -32 -180 54 0.4
Unit
V V A A A W
W / oC
o
Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current
1
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-case Thermal Resistance Junction-ambient
Symbol Max. Max.
Rthj-c Rthj-a
Ratings
2.3 62
o o
Unit
C /W C /W
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Any changing of specification will not be informed individual
01-Jun-2002 ...
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