Power MOSFET
Advance Technical Information
HiperFETTM Power MOSFET Q3-Class
N-Channel Enhancement Mode Fast Intrinsic Rectifier
IXF...
Description
Advance Technical Information
HiperFETTM Power MOSFET Q3-Class
N-Channel Enhancement Mode Fast Intrinsic Rectifier
IXFN80N50Q3
VDSS ID25
RDS(on) trr
= = ≤ ≤
500V 63A 65mΩ 250ns
miniBLOC E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 500 500 ±30 ±40 63 240 80 5 50 780 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g Features
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S G
S D
G = Gate S = Source
D = Drain
Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal.
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International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG
Advantages
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High Power Density Easy to Mount Space Savings
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 40A, Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. 500 3.5 6.5 V V
Applications
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±200 nA 50 μA 2 mA 65 mΩ
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