IXFP110N15T2

Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET IXFA110N15T2 IXFP110N15T2 VDSS = ID25 = RDS(on)  150V 110A 13m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 150 V 150 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS,TJ  175C TC = 25C 110 300 50 800 15 480 -55 ... +175 175 -55 ... +175 A A A mJ V/ns W  C  C  C Maximum Lead Temperature for Soldering 300 1.6 mm (0.062in.) from Case for 10s 260 Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 °C °C N/lb Nm/lb.in TO-263 TO-220 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C unless otherwise specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 250A IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 0.5 ID25, Notes 1, 2 Characteristic Values Min. Typ. Max. 150 V 2.5 4.5 V             200 nA 5 A 150  A 11 13 m TO-263 (IXFA) TO-220 (IXFP) G S D (Tab) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International standard packages  175°C Operating Temperature  High current handling capability  Fast intrinsic Rectifier  Dynamic dV/dt rated  Low RDS(on) Advantages  Easy to mount  Space savings  Hi...